Ultra-Low Phase Noise BAW-Based Cross-Coupled Oscillator in 28 nm CMOS Technology

This paper presents a comprehensive analysis of a CMOS cross-coupled oscillator in 28 nm CMOS technology using a BAW resonator to achieve an ultra-low phase noise performance with low power consumption. The design methodology relies on the $g_{\mathbf{m}} / I_{\mathbf{D}}$ resourceful approach, promoting direct relation with noise. The efficiency and phase noise optimizations are carried out along with parasitic oscillation suppression to enhance the overall stability and performance of the circuit. The corner simulation shows an oscillation at 2.42 GHz, with a power consumption of 1.16 mW, and achieving a phase noise of -157.6 $\mathbf{d B c} / \mathbf{H z}$ at $\mathbf{1 ~ M H z}$ offset.

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Published
2025-09-21
DOI
https://doi.org/10.1109/prime66228.2025.11203407
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
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article

Ultra-Low Phase Noise BAW-Based Cross-Coupled Oscillator in 28 nm CMOS Technology

Estevan Chia Hung Tu, Emmanuel Pistono, Stéphane Thuries, Florence Podevin et al.
Semiconductor Quantum Structures and Devices
article

Ultra-Low Phase Noise BAW-Based Cross-Coupled Oscillator in 28 nm CMOS Technology

Estevan Chia Hung Tu, Emmanuel Pistono, Stéphane Thuries, Florence Podevin, Jean-Baptiste Begueret
article en

Abstract

This paper presents a comprehensive analysis of a CMOS cross-coupled oscillator in 28 nm CMOS technology using a BAW resonator to achieve an ultra-low phase noise performance with low power consumption. The design methodology relies on the $g_{\mathbf{m}} / I_{\mathbf{D}}$ resourceful approach, promoting direct relation with noise. The efficiency and phase noise optimizations are carried out along with parasitic oscillation suppression to enhance the overall stability and performance of the circuit. The corner simulation shows an oscillation at 2.42 GHz, with a power consumption of 1.16 mW, and achieving a phase noise of -157.6 $\mathbf{d B c} / \mathbf{H z}$ at $\mathbf{1 ~ M H z}$ offset.

Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Techniques of Informatics and Microelectronics for Integrated Systems Architecture (FR), NXP (Germany) (DE), Institut Polytechnique de Bordeaux (FR), Université Grenoble Alpes (FR)
Openalex Percentile: Top 76%
Semiconductor Quantum Structures and Devices
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Ultra-Low Phase Noise BAW-Based Cross-Coupled Oscillator in 28 nm CMOS Technology — Estevan Chia Hung Tu, Emmanuel Pistono, et al. · (2025) | TGRS Research Map | TGRS