Ultra-Low Phase Noise BAW-Based Cross-Coupled Oscillator in 28 nm CMOS Technology
This paper presents a comprehensive analysis of a CMOS cross-coupled oscillator in 28 nm CMOS technology using a BAW resonator to achieve an ultra-low phase noise performance with low power consumption. The design methodology relies on the $g_{\mathbf{m}} / I_{\mathbf{D}}$ resourceful approach, promoting direct relation with noise. The efficiency and phase noise optimizations are carried out along with parasitic oscillation suppression to enhance the overall stability and performance of the circuit. The corner simulation shows an oscillation at 2.42 GHz, with a power consumption of 1.16 mW, and achieving a phase noise of -157.6 $\mathbf{d B c} / \mathbf{H z}$ at $\mathbf{1 ~ M H z}$ offset.
Authors
- Estevan Chia Hung Tu (ORCID: https://orcid.org/0000-0002-7553-2648)
- Emmanuel Pistono (ORCID: https://orcid.org/0000-0002-1202-9092)
- Stéphane Thuries
- Florence Podevin (ORCID: https://orcid.org/0000-0002-8477-5617)
- Jean-Baptiste Begueret
Institutions
- Institut polytechnique de Grenoble (FR)
- Centre National de la Recherche Scientifique (FR)
- Université de Bordeaux (FR)
- Techniques of Informatics and Microelectronics for Integrated Systems Architecture (FR)
- NXP (Germany) (DE)
- Institut Polytechnique de Bordeaux (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2025-09-21
- DOI
- https://doi.org/10.1109/prime66228.2025.11203407
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00