Tailoring Resistive Switching Properties of Ga ₂ O _{3‐ <i>x</i>} Films: Role of Growth Parameters

In recent years, resistive random‐access memory (RRAM) has garnered significant interest as an emerging nonvolatile memory technology, offering potential for high‐density data storage and in‐memory computing. This study presents the resistive switching (RS) behavior of gallium oxide (Ga 2 O 3‐ x )‐based devices with the configuration Ag/Ga 2 O 3‐x / p + + ‐Si, fabricated via radio frequency magnetron sputtering. The influence of two key factors, viz., growth angle and film thickness, on the RS characteristics is systematically explored. Dual switching behavior (nonvolatile and threshold) is demonstrated by varying the compliance current ( I cc ) and oxide thickness. Devices with thinner films (≈15 nm) deposited at a glancing angle ( θ g = 80°) exhibit stable bipolar RS behavior with a high ON/OFF ratio (≈10 5 ) and a nonoverlapping switching window, greater stability compared to the on‐axis ( θ g = 0°) grown film. Conversely, thicker films (≈30 nm) exhibit threshold RS switching with enhanced stability. The tunability of RS behavior is attributed to stoichiometric and structural variations induced by oblique angle deposition. Current–voltage analysis indicates that switching arises from the formation and rupture of oxygen‐vacancy‐based conductive filaments. These findings highlight the potential of Ga 2 O 3‐ x films for engineering high‐performance, scalable RRAM devices suitable for cross‐bar array architectures.