Pop-down FBAR Structure for Thermal Stability without Sacrificing Coupling

This work proposes a novel pop-down film bulk acoustic resonator (FBAR) structure to improve thermal stability without sacrificing electromechanical coupling. The pop-down structure is achieved using a Si cavity formed by silicon migration technology (SiMiT), which simultaneously provides a self-defined acoustic boundary and induces initial tensile stress in the sputtered AlScN piezoelectric layer. Over the temperature range of −100 ¼C to 100 ¼C, the measured temperature coefficients of frequency (TCFs) are −12.98 ppm/¼C for the pop-down sealed-cavity bulk acoustic resonator (S-BAR) and −7.28 ppm/¼C for the pop-down FBAR, significantly better than the −30 ppm/¼C typical of uncompensated AlScN FBARs. The improvement is attributed to residual tensile stress arising from the concave pop-down geometry, lattice mismatch, and coefficient of thermal expansion (CTE) mismatch. These results demonstrate that the pop-down FBAR offers a promising pathway for thermally stable resonators while preserving strong electromechanical coupling, avoiding the coupling penalties typical of passive SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based compensation.

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Publication Details

Published
2025-09-15
DOI
https://doi.org/10.1109/ius62464.2025.11201665
Primary Topic
Silicone and Siloxane Chemistry
Type
article
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article

Pop-down FBAR Structure for Thermal Stability without Sacrificing Coupling

Fangsheng Qian, Yansong Yang, Chengjie Zuo, Xiaoya Duan et al.
Silicone and Siloxane Chemistry
article

Pop-down FBAR Structure for Thermal Stability without Sacrificing Coupling

Fangsheng Qian, Yansong Yang, Chengjie Zuo, Xiaoya Duan, Jiashuai Xu, Haiding Sun, Junyan Zheng, Kai Yang, Xingyu Liu, Zijun Ren
article en

Abstract

This work proposes a novel pop-down film bulk acoustic resonator (FBAR) structure to improve thermal stability without sacrificing electromechanical coupling. The pop-down structure is achieved using a Si cavity formed by silicon migration technology (SiMiT), which simultaneously provides a self-defined acoustic boundary and induces initial tensile stress in the sputtered AlScN piezoelectric layer. Over the temperature range of −100 ¼C to 100 ¼C, the measured temperature coefficients of frequency (TCFs) are −12.98 ppm/¼C for the pop-down sealed-cavity bulk acoustic resonator (S-BAR) and −7.28 ppm/¼C for the pop-down FBAR, significantly better than the −30 ppm/¼C typical of uncompensated AlScN FBARs. The improvement is attributed to residual tensile stress arising from the concave pop-down geometry, lattice mismatch, and coefficient of thermal expansion (CTE) mismatch. These results demonstrate that the pop-down FBAR offers a promising pathway for thermally stable resonators while preserving strong electromechanical coupling, avoiding the coupling penalties typical of passive SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based compensation.

University of Science and Technology of China (CN), Hong Kong University of Science and Technology (HK), University of Hong Kong (HK)
Openalex Percentile: Top 77%
Silicone and Siloxane Chemistry
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