Thick Polymer-AlScN Integrated PMUT with Optimized Transceiver Design by DOE Approach
To enhance air-coupled piezoelectric micromachined ultrasonic transducers (PMUTs) performance, the substitution of the traditional silicon structural layer with a 40 µm-thick polymer (Parylene-C) coupled with aluminum scandium nitride (AlSc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">30%</inf>N) is proposed as a transformative solution leading to 12.8% increase in the sound pressure level (SPL) and boost the total generated charge by 2.8-fold compared to conventional Si-based PMUTs. The finite element (FE) method coupled with statistical design of experiment (DOE) is utilized to optimize the transducer’s performance. The DOE is conducted in two steps. First, a screening step evaluates the impact of line/radial slit patterns, clamp configuration, and shape of the resonant membrane on device transmission/reception sensitivity. Second, an optimization step uses response surface methodology (RSM), based on three key factors selected from the previous screening. In RSM, a second-order polynomial model is fitted to round-trip sensitivity, and a central composite design is used to explore the design space. DOE screening indicates the optimal configuration improves reception by 30% with a 3.4 dB lower transmission and 8% smaller footprint. The quadratic model (RMSE=0.38, R<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>= 0.84) indicates that decreasing clamp radial width and increasing the number of radial slits enhance round-trip sensitivity.
Authors
- M. Namnabat
- Annalisa De Pastina (ORCID: https://orcid.org/0000-0002-8628-6737)
- Luis Guillermo Villanueva (ORCID: https://orcid.org/0000-0003-3340-2930)
- Rodrigo Tumolin Rocha (ORCID: https://orcid.org/0000-0001-6770-6380)
Institutions
- Silicon Austria Labs (Austria) (AT)
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Published
- 2025-09-15
- DOI
- https://doi.org/10.1109/ius62464.2025.11201315
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00