Effects of Annealing Temperature and Sputtering Power on the Optical and Electrical Properties of Transparent Conductive Zinc Oxide Films Doped with Titanium

In this study, we investigated the optical and electrical properties of transparent conductive zinc oxide (ZnO) thin films doped with titanium (Ti) deposited through radio frequency (RF) sputtering at different annealing temperatures and sputtering powers.The ZnO:Ti thin films exhibited the lowest resistivity of 1.60 10 -3 -cm, a high transmittance of 89%, and the optimal figure of merit (FOM) of 9.31 10 -8 -1 when sputtered at 100 W for 30 min and annealed at 500 .The scanning electron microscopy of the films' surface morphology revealed that higher annealing temperatures promoted grain growth.