Tunable Bandgap and Structural Characterization of Boron‐Doped Graphene Synthesized through Electrochemical Exfoliation

This study addresses the production of boron‐doped graphene by an electrochemical exfoliation method. Two samples (S‐1 and S‐2) are prepared utilizing 0.5 M and 1 M solutions of 20% boron‐containing fertilizer in a Na 2 SO 4 electrolyte. Boron doping is confirmed by Fourier transform infrared spectroscopy, which identifies boron‐carbon bonding. Raman spectroscopy shows that S‐1 has a higher I D / I G ratio (defect density indicator) than S‐2, with values of 2.06 and 1.97, respectively. X‐ray diffraction analysis reveals improved crystallinity (from 41.95% to 45.54%) and increased crystallite size (from 81.80 nm to 86.43 nm). These structural changes enable bandgap tunability in boron‐doped graphene, with bandgap ranges of 1.64–3.65 eV for S1 and 1.75–3.30 eV for S2. While these tunable bandgaps indicate modified electronic properties, further functional testing is required to evaluate their suitability for optoelectronic and nanoelectronic applications. Morphological and elemental analyses are also conducted to support these findings.