Quantum Anomalous Hall Effect in a Linear Spin‐Gapless Semiconducting 2D Zn ₂ N ₃ Monolayer

Abstract The search for zero‐gap spin‐polarized materials such as spin‐gapless semiconductors (SGSs) and their interplay with topological phases is of central importance for realizing dissipationless spintronic functionalities, with the quantum anomalous Hall (QAH) effect being a particularly appealing target. Kagome lattices provide a natural platform for such physics owing to their possible Weyl‐like dispersions and strong correlation effects. Here, by first‐principle calculations, the kagome‐lattice Zn 2 N 3 monolayer is identified as a 2D linear SGS that hosts intrinsic ferromagnetism with a Curie temperature of 204 K. In the absence of spin–orbit coupling (SOC), the system exhibits spin‐down Weyl‐like crossings and spin‐up gap at the Fermi level with complete spin polarization. SOC lifts these degeneracies, opening a topological gap and inducing an intrinsic QAH state with Chern number 𝐶 = 1 and chiral edge states, which remain stable under biaxial strain up to 10%. These results establish Zn 2 N 3 as a robust platform for next‐generation spintronic and topological quantum devices with ultralow energy dissipation.