Growth and Surface Characterization of a Type-II ZnO/ZnS Heterostructure

We report the in situ formation of a type-II ZnO/ZnS heterostructure via the thermal oxidation of a ZnS(001) single crystal under a clean controlled oxygen atmosphere. By combining X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we investigated the chemical composition, electronic structure, and surface morphology of the resulting interface. Core-level shifts observed in our XPS measurements suggest an upward band-bending due to the formation of a hybrid interface. AFM measurements show that ZnO grows through a layer-plus-island mode, forming distorted hexagonal nanoislands. Our band alignment analysis confirms the type-II heterostructure arrangement with suitable electronic band-edge positions for efficient charge separation, highlighting its potential as a platform for photocatalytic applications, such as hydrogen and oxygen evolution reactions (HER and OER).

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2025-10-09
DOI
https://doi.org/10.1021/acs.jpcc.5c05124
Citations
2
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
1.04

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article

Growth and Surface Characterization of a Type-II ZnO/ZnS Heterostructure

P. E. S. de Oliveira, Pedro Venezuela, Fernando Stavale, Guilherme Félix et al.
2 citations
The Journal of Physical Chemistry C
ZnO doping and properties
1.04
article

Growth and Surface Characterization of a Type-II ZnO/ZnS Heterostructure

P. E. S. de Oliveira, Pedro Venezuela, Fernando Stavale, Guilherme Félix, Ivan Evangelista do Vale Coelho
article en
2 citations

Abstract

We report the in situ formation of a type-II ZnO/ZnS heterostructure via the thermal oxidation of a ZnS(001) single crystal under a clean controlled oxygen atmosphere. By combining X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we investigated the chemical composition, electronic structure, and surface morphology of the resulting interface. Core-level shifts observed in our XPS measurements suggest an upward band-bending due to the formation of a hybrid interface. AFM measurements show that ZnO grows through a layer-plus-island mode, forming distorted hexagonal nanoislands. Our band alignment analysis confirms the type-II heterostructure arrangement with suitable electronic band-edge positions for efficient charge separation, highlighting its potential as a platform for photocatalytic applications, such as hydrogen and oxygen evolution reactions (HER and OER).

The Journal of Physical Chemistry CVol. 129(42)
Universidade Federal Fluminense (BR), Centro Brasileiro de Pesquisas Físicas (BR)
Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro, Centro Nacional de Processamento de Alto Desempenho em São Paulo
Openalex Percentile: Top 21%
ZnO doping and properties
1.04
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Growth and Surface Characterization of a Type-II ZnO/ZnS Heterostructure — P. E. S. de Oliveira, Pedro Venezuela, et al. · The Journal of Physical Chemistry C (2025) | TGRS Research Map | TGRS