Growth and Surface Characterization of a Type-II ZnO/ZnS Heterostructure
We report the in situ formation of a type-II ZnO/ZnS heterostructure via the thermal oxidation of a ZnS(001) single crystal under a clean controlled oxygen atmosphere. By combining X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM), we investigated the chemical composition, electronic structure, and surface morphology of the resulting interface. Core-level shifts observed in our XPS measurements suggest an upward band-bending due to the formation of a hybrid interface. AFM measurements show that ZnO grows through a layer-plus-island mode, forming distorted hexagonal nanoislands. Our band alignment analysis confirms the type-II heterostructure arrangement with suitable electronic band-edge positions for efficient charge separation, highlighting its potential as a platform for photocatalytic applications, such as hydrogen and oxygen evolution reactions (HER and OER).
Authors
- P. E. S. de Oliveira (ORCID: https://orcid.org/0009-0003-2119-0149)
- Pedro Venezuela (ORCID: https://orcid.org/0000-0002-4166-2487)
- Fernando Stavale (ORCID: https://orcid.org/0000-0001-6771-0048)
- Guilherme Félix (ORCID: https://orcid.org/0000-0001-8669-6667)
- Ivan Evangelista do Vale Coelho
Institutions
- Universidade Federal Fluminense (BR)
- Centro Brasileiro de Pesquisas Físicas (BR)
Publication Details
- Journal
- The Journal of Physical Chemistry C
- Published
- 2025-10-09
- DOI
- https://doi.org/10.1021/acs.jpcc.5c05124
- Citations
- 2
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- Conselho Nacional de Desenvolvimento Científico e Tecnológico
- Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro
- Centro Nacional de Processamento de Alto Desempenho em São Paulo