CVD-Grown 2D MoSe <sub>2</sub> Nanolayers for Energy Storage

Two-dimensional (2D) transition metal dichalcogenides such as molybdenum diselenide (MoSe2) have emerged as promising materials for optoelectronics, quantum devices, and energy storage due to their layer-dependent bandgap and stable excitons. However, the scalable and controlled synthesis of high-quality 2D MoSe2 remains challenging. Traditional hydrothermal and liquid-phase exfoliation methods, commonly used in energy storage, lack precision in controlling atomic layers and their exact role, limiting further applications. Chemical vapor deposition (CVD) provides a scalable alternative, enabling the controlled growth of high-quality 2D MoSe2 layers. However, the photoelectrochemical performance and energy storage potential of CVD-grown 2D MoSe2 remain largely unexplored. This work investigates the MoSe2 layer-dependent unique quantum capacitance and photoinduced charge storage properties. Under light illumination, the trilayer MoSe2-based device exhibited a significant increase in drain current from 5 μA (dark) to 300 μA (light), demonstrating its potential for light-assisted charge storage. Electrochemical measurements in 0.5 M H2SO4 reveal a layer-dependent increase in areal capacitance under both dark and illumination conditions, with six-layer MoSe2 achieving 37 μF/cm2 in the dark and 52 μF/cm2 under illumination at a current density of 5 μA/cm2. The fabricated symmetric supercapacitor device with multilayer MoSe2 Film electrode exhibits an energy density of 0.0018 μW·h/cm2 with a power density of 8 μW/cm2. The excellent durability of the device is confirmed by retaining ∼ 91% capacitance after 4000 charge–discharge cycles at 1 μA/cm2. First-principles calculations using Density Functional Theory and Many-Body Perturbation Theory attribute this enhancement to Van Hove singularities and band nesting, boosting optical absorption and quantum capacitance. These findings highlight the potential of CVD-grown 2D MoSe2 layers as light-responsive electrochemical energy storage materials, paving the way for next-generation energy storage systems.

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Publication Details

Journal
ACS Applied Nano Materials
Published
2025-10-17
DOI
https://doi.org/10.1021/acsanm.5c04291
Citations
2
Primary Topic
Advancements in Battery Materials
Type
article
Field-Weighted Citation Impact
1.46
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CVD-Grown 2D MoSe 2 Nanolayers for Energy Storage

Suman Kumar Chakraborty, Sankha Mukherjee, Prasana K. Sahoo, Subrata Kr Ghosh et al.
2 citations
ACS Applied Nano Materials
Advancements in Battery Materials
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article

CVD-Grown 2D MoSe 2 Nanolayers for Energy Storage

Suman Kumar Chakraborty, Sankha Mukherjee, Prasana K. Sahoo, Subrata Kr Ghosh, Debabrata Pradhan, D. K. Goswami, Sudhir Kumar, Rajdeep Banerjee, Praveen Kumar, Tushar Waghmare
article en
2 citations

Abstract

Two-dimensional (2D) transition metal dichalcogenides such as molybdenum diselenide (MoSe2) have emerged as promising materials for optoelectronics, quantum devices, and energy storage due to their layer-dependent bandgap and stable excitons. However, the scalable and controlled synthesis of high-quality 2D MoSe2 remains challenging. Traditional hydrothermal and liquid-phase exfoliation methods, commonly used in energy storage, lack precision in controlling atomic layers and their exact role, limiting further applications. Chemical vapor deposition (CVD) provides a scalable alternative, enabling the controlled growth of high-quality 2D MoSe2 layers. However, the photoelectrochemical performance and energy storage potential of CVD-grown 2D MoSe2 remain largely unexplored. This work investigates the MoSe2 layer-dependent unique quantum capacitance and photoinduced charge storage properties. Under light illumination, the trilayer MoSe2-based device exhibited a significant increase in drain current from 5 μA (dark) to 300 μA (light), demonstrating its potential for light-assisted charge storage. Electrochemical measurements in 0.5 M H2SO4 reveal a layer-dependent increase in areal capacitance under both dark and illumination conditions, with six-layer MoSe2 achieving 37 μF/cm2 in the dark and 52 μF/cm2 under illumination at a current density of 5 μA/cm2. The fabricated symmetric supercapacitor device with multilayer MoSe2 Film electrode exhibits an energy density of 0.0018 μW·h/cm2 with a power density of 8 μW/cm2. The excellent durability of the device is confirmed by retaining ∼ 91% capacitance after 4000 charge–discharge cycles at 1 μA/cm2. First-principles calculations using Density Functional Theory and Many-Body Perturbation Theory attribute this enhancement to Van Hove singularities and band nesting, boosting optical absorption and quantum capacitance. These findings highlight the potential of CVD-grown 2D MoSe2 layers as light-responsive electrochemical energy storage materials, paving the way for next-generation energy storage systems.

ACS Applied Nano MaterialsVol. 8(43)
Warsaw University of Technology (PL), Indian Institute of Technology Kharagpur (IN), Nano Energy (South Africa) (ZA), Politecnico di Milano (IT)
Openalex Percentile: Top 15%
Advancements in Battery Materials
1.46
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