Giant intrinsic anomalous Hall conductivity in a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>MnSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:m

Using first-principles self-consistent calculations, we show that ${\mathrm{MnSe}}_{2}$ with room-temperature ferromagnetism serves as a promising magnetic proximity partner for nonmagnetic ${\mathrm{MoS}}_{2}$ to realize a giant intrinsic anomalous Hall effect. The anomalous Hall conductivity (AHC) reaches up to ${10}^{3}$ S/cm, exceeding that of ${\mathrm{MnSe}}_{2}$ itself by over 30 times, and persists across a wide energy range spanning of 100 meV near the Fermi energy. This large AHC arises from the proximity-induced significant unbalance distribution of Berry curvature near multiple valleys (comprising two traditional valleys from ${\mathrm{MoS}}_{2}$ and six additional valleys from ${\mathrm{MnSe}}_{2}$), for which crystalline anisotropy plays a crucial role. We further illustrate that the giant intrinsic AHC remains robust to the changes in stacking configuration and vertical strain despite band modification. In addition, the significant AHC observed near the Fermi energy in ${\mathrm{MoS}}_{2}/{\mathrm{MnSe}}_{2}$ vanishes when ${\mathrm{MnSe}}_{2}$ is substituted with alternative magnets. Our results establish a routine for leveraging heterostructure anisotropy to design low-power Hall sensors or circuits based on ${\mathrm{MoS}}_{2}$.