Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic

Herein, we present a thulium (Tm) doping strategy combined with hafnium oxide passivation annealing to enhance the preferable orientation crystallinity in SnO films toward balanced hole and electron transport. The optimized ambipolar Tm-doped SnO thin-film transistors (TFTs) exhibit hole and electron mobilities of 30.1 cm<sup>2</sup>/V·s and 11.8 cm<sup>2</sup>/V·s with a turn-on voltage about 0 V, respectively. Furthermore, we fabricate complementary thin-film logic circuits using these ambipolar SnO TFTs, including inverters and NAND and NOR gates. A record gain of 474.5 (V/V) is obtained for our ambipolar SnO inverter at a supply voltage of 6 V, which is the highest value reported among all ambipolar material systems due to the matched p- and n-type behaviors of the ambipolar SnO TFTs. By expanding the understanding of ambipolar inverter behavior, this work highlights the significant potential of ambipolar SnO TFTs for future high-performance complementary thin-film circuits.

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Publication Details

Journal
Nano Letters
Published
2025-10-17
DOI
https://doi.org/10.1021/acs.nanolett.5c04300
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.73
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article

Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic

Qianlei Tian, Li‐Ming Tang, Ruohao Hong, Wen Zhu et al.
1 citations
Nano Letters
Advanced Memory and Neural Computing
0.73
article

Symmetrical Ambipolar Transport in SnO Thin-Film Transistors Enabled by Dopant-Induced Preferential Crystal Orientation toward Complementary Logic

Qianlei Tian, Li‐Ming Tang, Ruohao Hong, Wen Zhu, Lin Tang, Baoxing Zhai, Xingqiang Liu, Yin Xu, Lei Liao, Denis Flandre, Xuming Zou, Guoli Li, Yanrong Wang, Hanzhong Liu, Ming-Yang Cao, Xinxin Xu, Yu Song, Jean-Pierre Raskin, Penghui He
article en
1 citations

Abstract

Herein, we present a thulium (Tm) doping strategy combined with hafnium oxide passivation annealing to enhance the preferable orientation crystallinity in SnO films toward balanced hole and electron transport. The optimized ambipolar Tm-doped SnO thin-film transistors (TFTs) exhibit hole and electron mobilities of 30.1 cm<sup>2</sup>/V·s and 11.8 cm<sup>2</sup>/V·s with a turn-on voltage about 0 V, respectively. Furthermore, we fabricate complementary thin-film logic circuits using these ambipolar SnO TFTs, including inverters and NAND and NOR gates. A record gain of 474.5 (V/V) is obtained for our ambipolar SnO inverter at a supply voltage of 6 V, which is the highest value reported among all ambipolar material systems due to the matched p- and n-type behaviors of the ambipolar SnO TFTs. By expanding the understanding of ambipolar inverter behavior, this work highlights the significant potential of ambipolar SnO TFTs for future high-performance complementary thin-film circuits.

Nano LettersVol. 25(43)
Hunan University (CN), Advanced Semiconductor Engineering (Taiwan) (TW), Henan Academy of Sciences (CN), Integrated Optoelectronics (Norway) (NO), Advanced Materials and Devices (United States) (US), Institute of Semiconductors (CN), Institute of Information and Communication Technologies (BG), Huazhong University of Science and Technology (CN), Hunan University of Technology (CN), UCLouvain (BE)
Openalex Percentile: Top 22%
Advanced Memory and Neural Computing
0.73
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