Step-Graded III–V Metamorphic Buffers on Ge for High-Efficiency Photovoltaics: Investigation of Strain Relaxation and Morphology Evolution

This work is motivated by the need to enhance efficiency and radiation resistance and reduce weight in high-performance photovoltaic devices, with applications spanning both terrestrial and space environments. Metamorphic buffers are key enablers for reducing defect formation in lattice-mismatched structures, which are among the most widespread technologies for high-efficiency photovoltaic energy conversion. Although many systems have been created, absolute certainty about the effective relaxation mechanism remains unattained. In this work, MOVPE-grown step-graded buffers with variable In content were obtained on Ge substrates and investigated to identify the critical thresholds that govern strain relaxation and defect formation. The results show that the buffers are fully strained when the In top-layer content is <6.0%, while a degree of relaxation in the entire structure appears when the In top-layer content is >6.0%. In addition, the relaxation phenomenon is paralleled by the formation of a tilt angle between the layers and the substrate. We also found evidence that the appearance of relaxation is not limited to the upper layer but is presented by the structure as a whole. The effects of Te doping inside the InGaAs layers were also investigated: Te does not influence the structure of the crystal, but it introduces a Burstein–Moss blue shift in the photoluminescence energy of about 20 meV. Eventually, to reduce defect formation with the goal of achieving high-efficiency photovoltaic devices, a thick layer with a lower In content was grown onto the overshoot material (In0.12Ga0.88As). The results obtained confirm the high quality of the buffers and unveil the critical points, which are responsible for the most important changes in the buffer architecture and should be considered in future material engineering. The results provide valuable insights for the design of high-performance, sustainable photovoltaic devices and contribute to the advancement of III–V semiconductor integration on Ge substrates.