Measurement of the optical phase statistics of single-mode semiconductor lasers biased around the threshold current

We report on the experimental analysis of the statistics of the optical phase of the light emitted by a distributed-feedback (DFB) laser. We measure the dependence of the phase diffusion coefficient on the applied bias current in the region around the threshold current. We measure the phase noise statistics using three different methods based on i) averages of the noise phase trajectories over different temporal windows, ii) the variance of the phase noise difference, and iii) the frequency noise spectral density. The comparison between the results obtained with these methods is succesful. We obtain that the phase diffusion coefficient monotonously decreases with the bias current in the region around threshold. We finally compare our experimental results with simple analytical expressions for the below and above threshold cases based on Schawlow-Townes laws.

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Publication Details

Journal
Optics Express
Published
2025-10-16
DOI
https://doi.org/10.1364/oe.574701
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Measurement of the optical phase statistics of single-mode semiconductor lasers biased around the threshold current

Alejandro Rosado, I. Esquivias, Á. Valle, G. Soldevilla
Optics Express
Semiconductor Lasers and Optical Devices
article

Measurement of the optical phase statistics of single-mode semiconductor lasers biased around the threshold current

Alejandro Rosado, I. Esquivias, Á. Valle, G. Soldevilla
article en

Abstract

We report on the experimental analysis of the statistics of the optical phase of the light emitted by a distributed-feedback (DFB) laser. We measure the dependence of the phase diffusion coefficient on the applied bias current in the region around the threshold current. We measure the phase noise statistics using three different methods based on i) averages of the noise phase trajectories over different temporal windows, ii) the variance of the phase noise difference, and iii) the frequency noise spectral density. The comparison between the results obtained with these methods is succesful. We obtain that the phase diffusion coefficient monotonously decreases with the bias current in the region around threshold. We finally compare our experimental results with simple analytical expressions for the below and above threshold cases based on Schawlow-Townes laws.

Optics ExpressVol. 33(23)
Trinity College Dublin (IE), Dublin City University (IE), Universidad Politécnica de Madrid (ES)
Openalex Percentile: Top 71%
Semiconductor Lasers and Optical Devices
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