Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT

In this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice. A practical prototype with a reduced number of components is proposed, with empirical concepts used to explain its predictive performance when a coreless transformer is series-connected to the E-mode GaN-on-Si HEMT for switching-mode conduction. Conduction modes arising at the p-GaN/n-AlGaN/i-GaN heterojunction in accordance with specifications from the manufacturer's datasheet were validated using a didactic physical-based model dependent on semiconductor parameters of gallium nitride (GaN). Test circuit-examined waveforms were analyzed, which confirmed that the switching conduction mode of the 2-DEG channel is dependent on physical parameters such as switching operating frequency, temperature, low-field electron mobility, and space charge capacitance.