Tuning the electrical parameters of non-stoichiometric gallium oxide-based memristor

In this work, we investigate the electrical performance of gallium oxide-based memristors by tuning the stoichiometry. Three variants of gallium oxide-based memristors (Ga₂O₃, Ga₂O3−x, Ga₂Oₓ where x = 1.1) with titanium (Ti) as top electrode and copper (Cu) as the bottom electrode are modeled in SILVACO TCAD ATLAS tool. Oxygen vacancies and charge carrier dynamics significantly modulate the resistive switching behavior of memristor devices. The ON/OFF current ratio varies, with Ga₂Oₓ achieving the highest switching efficiency. The hysteresis loop confirms stable resistive switching behavior. It emphasizes the interplay of stoichiometry on the conduction mechanism across the memristor. This work presents a technique to enhance memristors for energy-efficient memory applications and next-generation neuromorphic computing by deepening our understanding of defect-engineered switching in ultra-wide-bandgap oxides.