Sulfur‐Assisted One‐Pot Synthesis of Ultrathin Rhombus‐Shaped Bi <sub>2</sub> S <sub>3</sub> Nanosheets for Flexible NIR Photodetectors

A sulfur-assisted one-pot strategy is developed to synthesize ultrathin bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) nanosheets, enabling high-performance flexible photodetectors. By tuning the sulfur content, the resulting morphology can be controlled to yield either bulk structures or nanosheets. The synthesized Bi<sub>2</sub>S<sub>3</sub> nanosheets exhibit a uniform thickness of ≈86 nm and a narrow bandgap of 1.24 eV, enabling broadband light absorption from the ultraviolet (UV) to the infrared (IR) regions. A flexible photodetector is fabricated by uniformly spray-coating the Bi<sub>2</sub>S<sub>3</sub> dispersion onto a PDMS substrate. Under 980 nm Near-IR (NIR) illumination, the device demonstrates a photocurrent of 61.2 µA, a responsivity (R) of 0.95 A W<sup>-1</sup>, a detectivity (D<sup>*</sup>) of 1.4 × 10<sup>12</sup> Jones, and an external quantum efficiency (EQE) of 120%. The device also exhibits excellent operational stability, maintaining its initial photocurrent over 650 illumination cycles. It maintains 92% of its photocurrent under bending radii of 12, 10, and 8 mm, and retains ≈90% of its original performance after 20 000 bending cycles at a radius of 8 mm. These results demonstrate that morphology-controlled Bi<sub>2</sub>S<sub>3</sub> nanosheets effectively mitigate brittleness, providing both enhanced mechanical flexibility and reliable photodetection performance.

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Publication Details

Journal
Small
Published
2025-10-16
DOI
https://doi.org/10.1002/smll.202507268
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Sulfur‐Assisted One‐Pot Synthesis of Ultrathin Rhombus‐Shaped Bi 2 S 3 Nanosheets for Flexible NIR Photodetectors

Myung Hyun Kang, Wooseok Song, Jongsun Lim, Hyejin Rhyu et al.
Small
Chalcogenide Semiconductor Thin Films
article

Sulfur‐Assisted One‐Pot Synthesis of Ultrathin Rhombus‐Shaped Bi 2 S 3 Nanosheets for Flexible NIR Photodetectors

Myung Hyun Kang, Wooseok Song, Jongsun Lim, Hyejin Rhyu, Sung Myung, Suhun Jo, Chanwon Park, Sun Sook Lee
article en

Abstract

A sulfur-assisted one-pot strategy is developed to synthesize ultrathin bismuth sulfide (Bi<sub>2</sub>S<sub>3</sub>) nanosheets, enabling high-performance flexible photodetectors. By tuning the sulfur content, the resulting morphology can be controlled to yield either bulk structures or nanosheets. The synthesized Bi<sub>2</sub>S<sub>3</sub> nanosheets exhibit a uniform thickness of ≈86 nm and a narrow bandgap of 1.24 eV, enabling broadband light absorption from the ultraviolet (UV) to the infrared (IR) regions. A flexible photodetector is fabricated by uniformly spray-coating the Bi<sub>2</sub>S<sub>3</sub> dispersion onto a PDMS substrate. Under 980 nm Near-IR (NIR) illumination, the device demonstrates a photocurrent of 61.2 µA, a responsivity (R) of 0.95 A W<sup>-1</sup>, a detectivity (D<sup>*</sup>) of 1.4 × 10<sup>12</sup> Jones, and an external quantum efficiency (EQE) of 120%. The device also exhibits excellent operational stability, maintaining its initial photocurrent over 650 illumination cycles. It maintains 92% of its photocurrent under bending radii of 12, 10, and 8 mm, and retains ≈90% of its original performance after 20 000 bending cycles at a radius of 8 mm. These results demonstrate that morphology-controlled Bi<sub>2</sub>S<sub>3</sub> nanosheets effectively mitigate brittleness, providing both enhanced mechanical flexibility and reliable photodetection performance.

SmallVol. 21(48)
Materials Research Group (United States) (US)
Openalex Percentile: Top 71%
Chalcogenide Semiconductor Thin Films
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