Oxide Formation at the Sulfide Film‐Copper Interface in Anoxic Sulfide Solution and On‐Line Sulfide Detection Via Linear Polarization Resistance

ABSTRACT The observation of a thin oxide film on oxygen free phosphorous doped copper after several days of exposure in supposedly anoxic conditions poses several questions, where the most straight‐forward answers regarding sample preparation and handling is oftentimes overlooked. In an effort to minimize the environmental factors contributing to the oxide formation on the copper surface, a flow through cell arrangement was built to investigate the oxide formation at the Cu–Cu 2 S interface after exposure to anoxic sulfide containing phosphate buffer solution. The post exposure characterization by scanning electron microscopy and focused ion beam revealed no oxide formation on the copper surface in the absence of oxygen, while the exposure of the copper surface during the metallographic sample preparation phase, which employs the use of aerated water, causes the formation of copper oxide. Furthermore, a novel technique for noninvasive, semi‐quantitative, and on‐line sulfide determination is presented. The anodic current density determined from the linear polarization resistance of copper in sulfide solution was found to linearly increase with sulfide concentration.