300mm All Silicon Gate-Stack for Si/SiGe Spin Qubit
The process development made on 300 mm Si/SiGe qubit devices, aimed at transitioning from a single-qubit device to a scalable, high-fidelity spin qubit system are presented. This involves the development of various mod-ules, including heterostructure growth, junction, and gate-stack.
Authors
- Roger Loo (ORCID: https://orcid.org/0000-0003-3513-6058)
- Clément Godfrin (ORCID: https://orcid.org/0000-0002-5244-3474)
- Bart Raes (ORCID: https://orcid.org/0000-0003-0928-0654)
- Massimo Mongillo (ORCID: https://orcid.org/0000-0002-6475-6320)
- Kristiaan De Greve (ORCID: https://orcid.org/0000-0002-1314-9715)
- Sofie Beyne (ORCID: https://orcid.org/0000-0002-5138-0280)
- Stefan Kubicek (ORCID: https://orcid.org/0000-0003-0855-8343)
- Yosuke Shimura (ORCID: https://orcid.org/0000-0002-1944-9970)
- Danny Wan (ORCID: https://orcid.org/0000-0003-4847-3184)
- Sugandha Sharma
- Arne Loenders (ORCID: https://orcid.org/0009-0009-1596-026X)
- Gulzat Juliel
Publication Details
- Published
- 2025-09-18
- DOI
- https://doi.org/10.7567/ssdm.2025.e-5-01
- Primary Topic
- Quantum and electron transport phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00