Trench super junction power device by plasma doping: a structural, chemical-physical, and profiling investigation

Abstract The development of superjunction (SJ) power MOS trench FET devices remains a significant and expanding area of interest in the microelectronics industry. Among various approaches, forming very shallow junctions on trench sidewalls is under investigation for its potential advantages, including smaller pitch, low-resistivity epitaxy, and cost-effective processing. This work presents the main results of applying the plasma doping technique to achieve a thin doping layer on trench sidewalls, focusing on the fundamental and challenging aspects of layer characterization. The findings highlight a promising route for the creation of innovative and high-performance SJs.