Pressure‐Induced Performance Surge in Robust (API)PbBr ₄ Photodetectors for Extreme Environments

Abstract As extreme high‐pressure environments are increasingly encountered in applications such as aerospace, deep‐Earth exploration, and deep‐sea imaging, the need for reliable photodetectors capable of operating under such conditions has become more critical. However, the performance of most optoelectronic devices deteriorates or even fails entirely when subjected to extreme high pressures. Here, a high‐pressure robust photodetector based on the 2D layered perovskite (API)PbBr 4 (where API: 3‐aminopropylimidazole) is reported. Benefiting from the unique structural evolution of (API)PbBr 4 under high pressure, the device demonstrates outstanding optoelectronic performance under 13.5 GPa, featuring a responsivity of up to 248.0 A W −1 , a specific detectivity (D * ) exceeding 2.2 × 10 12 Jones, and an external quantum efficiency (EQE) as high as 8.4 × 10⁴%. Compared to its performance under an initial pressure of 1.9 GPa, these performance improvements have been significantly achieved in terms of photocurrent, responsivity, and EQE by more than 2.5 times. More importantly, D * is enhanced by over five times. These findings offer valuable insights into reliable optoelectronic devices under extreme conditions.