The effect of defects on the formation of inversion domain boundaries in AlScN and their structural/electronic property improvement
The performance of wurtzite AlScN is hindered by defects such as inversion domain boundaries (IDBs) and interfacial contaminations. Both piezoelectricity and structural stability can be enhanced by applying tensile strain and reducing oxygen concentration.
Authors
- Kyeongjae Cho (ORCID: https://orcid.org/0000-0003-2698-7774)
- Andrew C. Kummel (ORCID: https://orcid.org/0000-0001-8301-9855)
- Taesoon Hwang (ORCID: https://orcid.org/0000-0002-1264-1265)
Institutions
- The University of Texas at Dallas (US)
- University of California San Diego (US)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-10-15
- DOI
- https://doi.org/10.1039/d5tc02770e
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00