In-band spurious suppression in first-order antisymmetric-mode resonators using air holes and half electrode

Laterally excited bulk acoustic resonator (XBAR) exhibits a high electromechanical coupling coefficient ( k t 2 ) due to their intrinsically superior piezoelectric properties, which is highly advantageous for the subsequent design and implementation of acoustic filters. However,it is not yet suitable for commercial application due to its numerous spurious modes and low quality factor ( Q value). This paper presents an exhaustive analysis of the origins of in-band spurious modes and the method to suppress based on the first-order antisymmetric (A1) mode XBAR. Simulation results indicate that these spurious modes primarily originate from acoustic wave scattering along unintended propagation paths and standing waves caused by crosstalk between electrodes. These spurious modes lead to energy dissipation, thereby reducing the resonator’s Q value. To effectively suppress them without increasing fabrication complexity while significantly enhancing the Q value, an etching-hole strategy is proposed, introducing the transverse holes that create acoustic impedance mismatch based on velocity differences. Additionally, the adoption of a half electrode configuration optimizes the electric field and stress redistribution within the resonator, thereby effectively reducing interfacial losses at the electrode-piezoelectric layer interface and enhancing the Q value by approximately 3.5 times. The fabricated XBAR, integrating holes and half electrode configuration, exhibits an in-band spurious-free response, a Bode- Q value of 1954, a k t 2 of 27.5 % and an exceptionally high figure of merit ( FOM = k t 2 × Bode- Q ) of 537.

Authors

Institutions

Publication Details

Journal
Engineering Science and Technology an International Journal
Published
2025-10-15
DOI
https://doi.org/10.1016/j.jestch.2025.102207
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

In-band spurious suppression in first-order antisymmetric-mode resonators using air holes and half electrode

Shitao Lv, Qiao Xu, Yi Cao, Tengfei Xu et al.
Engineering Science and Technology an International Journal
Acoustic Wave Resonator Technologies
article

In-band spurious suppression in first-order antisymmetric-mode resonators using air holes and half electrode

Shitao Lv, Qiao Xu, Yi Cao, Tengfei Xu, Dongchen Sui, Qiang Xu, Haiyan Sun, Jicong Zhao
article en

Abstract

Laterally excited bulk acoustic resonator (XBAR) exhibits a high electromechanical coupling coefficient ( k t 2 ) due to their intrinsically superior piezoelectric properties, which is highly advantageous for the subsequent design and implementation of acoustic filters. However,it is not yet suitable for commercial application due to its numerous spurious modes and low quality factor ( Q value). This paper presents an exhaustive analysis of the origins of in-band spurious modes and the method to suppress based on the first-order antisymmetric (A1) mode XBAR. Simulation results indicate that these spurious modes primarily originate from acoustic wave scattering along unintended propagation paths and standing waves caused by crosstalk between electrodes. These spurious modes lead to energy dissipation, thereby reducing the resonator’s Q value. To effectively suppress them without increasing fabrication complexity while significantly enhancing the Q value, an etching-hole strategy is proposed, introducing the transverse holes that create acoustic impedance mismatch based on velocity differences. Additionally, the adoption of a half electrode configuration optimizes the electric field and stress redistribution within the resonator, thereby effectively reducing interfacial losses at the electrode-piezoelectric layer interface and enhancing the Q value by approximately 3.5 times. The fabricated XBAR, integrating holes and half electrode configuration, exhibits an in-band spurious-free response, a Bode- Q value of 1954, a k t 2 of 27.5 % and an exceptionally high figure of merit ( FOM = k t 2 × Bode- Q ) of 537.

Engineering Science and Technology an International JournalVol. 71
Chinese Academy of Sciences (CN), Nantong University (CN), Shanghai Institute of Microsystem and Information Technology (CN)
Openalex Percentile: Top 72%
Acoustic Wave Resonator Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.