Design and Analysis of a Simple Gate Drive Power Supply for SiC MOSFET with Flybuck Converter
voltage while achieving high-density Balancing key metrics such as power, efficiency, volume, and isolation voltage while achieving high-density integration is a critical issue in constructing high-performance, high-voltage gate drive (GD) supply for SiC MOSFET. This paper presents a simple GD power supply based on the Flybuck topology. The isolated output is achieved through coupled windings, and the transformer can be made small with this topology. Compared to the traditional GD with Flyback converter, this presented GD circuit eliminates one auxiliary winding, reduces the number of the filter inductor and two rectifier diodes on the secondary side, and decreases the total number of components. Thus, it has a smaller volume and lower cost. The working principle and characteristics of the proposed GD circuit are analyzed in detail, and an experimental platform is built to validate the theoretical analysis and power supply performance.
Authors
- Qunfang Wu (ORCID: https://orcid.org/0000-0002-6437-404X)
- Jiani Zhou
- Hui Ma (ORCID: https://orcid.org/0000-0002-7107-810X)
- Mengqing Li
- Changbao Mi
- Yaqiang Wang (ORCID: https://orcid.org/0009-0001-1077-4451)
Institutions
- Nanjing University of Aeronautics and Astronautics (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/iccepe66357.2025.11193377
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00