Dark current mechanisms in ultra-thin mid-wave infrared detectors

Mid-wave infrared photodetectors with ultra-thin (t<250nm) absorbers are characterized electrically and optically for a range of absorber doping concentrations. Negative differential resistance is observed in unintentionally doped absorber samples and is attributed to depletion of the ultra-thin absorber. A significant reduction in room temperature dark current of about 30% is observed in devices with compensation-doped absorbers when compared to those with unintentionally doped absorbers. A qualitative model of voltage-, temperature-, and doping-dependent dark current is developed and used to explain the diffusion-limited dark current of depleted-absorber detectors at high operating temperatures. The results presented offer insight into the electrical and optical behavior of ultra-thin mid-wave infrared detectors and potential approaches for further reduction in dark current.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-10-15
DOI
https://doi.org/10.1063/5.0297236
Citations
1
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.73

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Dark current mechanisms in ultra-thin mid-wave infrared detectors

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Advanced Semiconductor Detectors and Materials
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article

Dark current mechanisms in ultra-thin mid-wave infrared detectors

Wesley Thomas Coon, Samuel D. Hawkins, Morgan Bergthold, N. C. Mansfield, Viktor A. Podolskiy, Daniel Wasserman, Aaron J. Muhowski, Yadviga Tischenko, Félix A. Estévez H., S. Purkait
article en
1 citations

Abstract

Mid-wave infrared photodetectors with ultra-thin (t<250nm) absorbers are characterized electrically and optically for a range of absorber doping concentrations. Negative differential resistance is observed in unintentionally doped absorber samples and is attributed to depletion of the ultra-thin absorber. A significant reduction in room temperature dark current of about 30% is observed in devices with compensation-doped absorbers when compared to those with unintentionally doped absorbers. A qualitative model of voltage-, temperature-, and doping-dependent dark current is developed and used to explain the diffusion-limited dark current of depleted-absorber detectors at high operating temperatures. The results presented offer insight into the electrical and optical behavior of ultra-thin mid-wave infrared detectors and potential approaches for further reduction in dark current.

Journal of Applied PhysicsVol. 138(15)
University of Massachusetts Lowell (US), Sandia National Laboratories (US), The University of Texas at Austin (US)
U.S. Department of Energy, National Aeronautics and Space Administration, Center for Integrated Nanotechnologies, Office of Science, Sandia National Laboratories
Openalex Percentile: Top 22%
Advanced Semiconductor Detectors and Materials
0.73
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Dark current mechanisms in ultra-thin mid-wave infrared detectors — Wesley Thomas Coon, Samuel D. Hawkins, et al. · Journal of Applied Physics (2025) | TGRS Research Map | TGRS