A High-Density 3.3 kV/2000 a SiC MOSFET Power Module: Design, Fabrication, and Experimental Evaluation

Medium voltage (MV) silicon carbide (SiC) power semiconductor modules with excellent electrothermal properties offer novel opportunities for revolutionizing high-power electronic converters and systems. Based on the requirement for MV high-capacity power modules from offshore wind power flexible high voltage direct current (HVDC) transmission systems, this paper successfully developed a high-density 3.3 kV/2000 A SiC MOSFET power module by paralleling 36 chips, which is the world's largest current capacity and highest power rating SiC module reported to date. First, the package design of this 3.3 kV/2000 A SiC power module is elaborated, including the parallel chip number selection, package architecture optimization, and material system design. Second, the critical electromagnetic and thermal performance of the SiC power module is evaluated in detail through simulation. Third, the key fabrication processes for the SiC power module are demonstrated, including the initial bare chip pre-screening stage. Finally, comprehensive experimental evaluations were conducted on the fabricated SiC power modules. Compared to the widely deployed 3.3 kV/1500 A Si IGBT power module in flexible HVDC converter valves, the developed 3.3 kV/2000 A SiC power module exhibits significant advancements in switching frequency, power loss, and power density, holding promising potential in driving the transition of flexible HVDC converter valves toward compactness, lightweight, and high efficiency.