Electrical and optical properties of Ga-doped ZnO transparent conductive thin films grown on flexible substrates by PAMBD method

Transparent conductive oxide thin films are key components of modern optoelectronic devices. In this study, Ga-doped ZnO thin films were prepared by plasma-assisted molecular beam deposit, and the effects of growth conditions on the film properties were investigated. The Zn source temperature and growth time are the key parameters to regulate the crystalline quality and electro-optical properties of the films. The study provides a new idea for the controlled growth of high-performance GZO thin films.