Opto-electrical model of a single-junction photovoltaic cell using Monte Carlo methods
Abstract In the context of the development of solar photovoltaics for global energy production, it remains essential to clearly identify performance limitations. The present article revisits the interpretations of photovoltaic cell performance by introducing a path-integral formulation of the current. The case of a single p–n junction cell operating in low injection conditions is examined as a proof of concept. The total current is calculated by implementing two different algorithms, which exhibit two viewpoints for analyzing the physics involved. The first one describes random walks on a reverse path space, back to the source of charge carriers. The second one describes random walks on a direct path space, starting from the source. Both algorithms are validated against an analytical solution. A Monte Carlo (MC) algorithm is also proposed for directly determining the voltage at the maximum power point without requiring the entire current–voltage curve. The calculation of a spectral-spatial internal quantum efficiency, combined with a statistical analysis of the random paths, demonstrates the relevance of this approach for interpreting the involved physics. Numerous benefits are anticipated from our advancements in MC techniques: enhanced physics representations, insensitivity of computation time to the dimension of the integration domain, and to the geometrical complexity at all scales.
Authors
- Thomas Villemin (ORCID: https://orcid.org/0000-0002-8875-1268)
- Thomas Vourc’h (ORCID: https://orcid.org/0000-0002-4542-3643)
- Gilles Parent (ORCID: https://orcid.org/0000-0003-3203-7265)
- Olivier Farges (ORCID: https://orcid.org/0000-0001-6630-059X)
- Rodolphe Vaillon (ORCID: https://orcid.org/0000-0002-8559-3604)
- Jérémi Dauchet (ORCID: https://orcid.org/0000-0001-9675-9721)
- Rémy Claverie (ORCID: https://orcid.org/0000-0003-1662-2907)
- Daniel Yaacoub
- Stéphane Blanco
- Richard Fournier
- Jean‐François Cornet
Institutions
- Centre National de la Recherche Scientifique (FR)
- Institut Pascal (FR)
- Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
- Laboratoire Sols et Environnement (FR)
- Laboratoire Énergies et Mécanique Théorique et Appliquée (FR)
- Laboratoire Plasma et Conversion d'Energie (FR)
Publication Details
- Journal
- Modelling and Simulation in Materials Science and Engineering
- Published
- 2025-10-14
- DOI
- https://doi.org/10.1088/1361-651x/ae1310
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00