Enhanced high-selectivity miniaturized bandpass filter using stacked glass-based IPD technology

This paper presents a fifth-order inverse Chebyshev bandpass filter (BPF) operating at 600-840 MHz, realized using a stacked glass-based Integrated Passive Device (IPD) technology featuring Through-Glass-Vias (TGVs). The architecture employs a vertically stacked topology that enables the independent optimization of 3D TGV inductors and Metal-Insulator-Metal (MIM) capacitors, which are integrated via a high-precision chip-to-wafer bonding process. The fabricated BPF achieves an exceptionally compact footprint of 0.012λ0×0.008λ0, a sharp shape factor (SF) of 2.62, and a low insertion loss of 1.26 dB. These results represent a superior combination of miniaturization and selectivity compared to other filters realized on competing substrates. This work demonstrates a scalable methodology for co-integrating high-performance passive components on glass interposers, advancing the development of 2.5D/3D ultra-high-density heterogeneous systems by significantly enhancing integration density and RF performance.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-10-14
DOI
https://doi.org/10.1587/elex.22.20250514
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
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article

Enhanced high-selectivity miniaturized bandpass filter using stacked glass-based IPD technology

Yihe Liu, Hao Hu, Shiwei Huang, Dong Wei et al.
IEICE Electronics Express
Semiconductor Lasers and Optical Devices
article

Enhanced high-selectivity miniaturized bandpass filter using stacked glass-based IPD technology

Yihe Liu, Hao Hu, Shiwei Huang, Dong Wei, Junjie Wang, Yang Liu, Shuang Liu, Wenbiao Ruan, Wenjuan Wu
article en

Abstract

This paper presents a fifth-order inverse Chebyshev bandpass filter (BPF) operating at 600-840 MHz, realized using a stacked glass-based Integrated Passive Device (IPD) technology featuring Through-Glass-Vias (TGVs). The architecture employs a vertically stacked topology that enables the independent optimization of 3D TGV inductors and Metal-Insulator-Metal (MIM) capacitors, which are integrated via a high-precision chip-to-wafer bonding process. The fabricated BPF achieves an exceptionally compact footprint of 0.012λ0×0.008λ0, a sharp shape factor (SF) of 2.62, and a low insertion loss of 1.26 dB. These results represent a superior combination of miniaturization and selectivity compared to other filters realized on competing substrates. This work demonstrates a scalable methodology for co-integrating high-performance passive components on glass interposers, advancing the development of 2.5D/3D ultra-high-density heterogeneous systems by significantly enhancing integration density and RF performance.

IEICE Electronics ExpressVol. 22(23)
University of Electronic Science and Technology of China (CN), Hebei Semiconductor Research Institute (CN), Xiamen University of Technology (CN)
Openalex Percentile: Top 71%
Semiconductor Lasers and Optical Devices
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