Enhanced high-selectivity miniaturized bandpass filter using stacked glass-based IPD technology
This paper presents a fifth-order inverse Chebyshev bandpass filter (BPF) operating at 600-840 MHz, realized using a stacked glass-based Integrated Passive Device (IPD) technology featuring Through-Glass-Vias (TGVs). The architecture employs a vertically stacked topology that enables the independent optimization of 3D TGV inductors and Metal-Insulator-Metal (MIM) capacitors, which are integrated via a high-precision chip-to-wafer bonding process. The fabricated BPF achieves an exceptionally compact footprint of 0.012λ0×0.008λ0, a sharp shape factor (SF) of 2.62, and a low insertion loss of 1.26 dB. These results represent a superior combination of miniaturization and selectivity compared to other filters realized on competing substrates. This work demonstrates a scalable methodology for co-integrating high-performance passive components on glass interposers, advancing the development of 2.5D/3D ultra-high-density heterogeneous systems by significantly enhancing integration density and RF performance.
Authors
- Yihe Liu (ORCID: https://orcid.org/0000-0002-8011-6972)
- Hao Hu (ORCID: https://orcid.org/0000-0002-6831-8352)
- Shiwei Huang (ORCID: https://orcid.org/0000-0001-9663-3256)
- Dong Wei (ORCID: https://orcid.org/0000-0002-6342-4658)
- Junjie Wang (ORCID: https://orcid.org/0000-0001-7183-422X)
- Yang Liu (ORCID: https://orcid.org/0000-0001-9849-478X)
- Shuang Liu (ORCID: https://orcid.org/0000-0003-2103-7200)
- Wenbiao Ruan
- Wenjuan Wu
Institutions
- University of Electronic Science and Technology of China (CN)
- Hebei Semiconductor Research Institute (CN)
- Xiamen University of Technology (CN)
Publication Details
- Journal
- IEICE Electronics Express
- Published
- 2025-10-14
- DOI
- https://doi.org/10.1587/elex.22.20250514
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00