Stokes soliton in integrated 4H-silicon-carbide microresonators

Silicon carbide on insulator (SiCOI) has emerged as a promising platform for microresonator-based frequency comb technology, owing to its exceptional optical properties—including a high refractive index, a broad transparency window, and the coexistence of both second- and third-order optical nonlinearities. Recent demonstrations have shown efficient Raman laser and frequency comb generation in SiC integrated microresonators. In this work, we report the first observation, to our knowledge, of Stokes soliton generation in SiC integrated microresonators. Pumped at a resonance of TE10 mode (1555.2 nm) with 270 mW of on-chip power, a strong Stokes signal at 1769.2 nm, corresponding to a Raman shift of approximately 776 cm −1 , is observed in a 4H-SiCOI microresonator with a 36 μm radius and a quality factor of 1.1 million for TE00 mode. As the pump wavelength is adiabatically tuned towards the resonance, the system undergoes a sequence of dynamical states—transitioning from Turing patterns to chaotic combs, and finally to a stable single soliton state. The pump laser serves a dual role: it acts as the energy source for Stokes comb generation and simultaneously compensates for thermal dynamics during Stokes soliton formation. These results demonstrate the low-noise frequency conversion into a longer wavelength range with the SiCOI platform, highlighting its potential for the mid-infrared soliton comb generation and gas spectroscopy applications.