Effect of metallicity on interlayer frictional potential energy of transition metal dichalcogenides under normal load

Van der Waals two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit great potential in solid tribology design. Understanding the mechanism at the electronic level is essential for the design of low-friction-coefficient 2D materials. Here, via a comparative study of metallic ${d}^{1}$ and semiconducting ${d}^{2}$ TMD bilayers (BLs), we find that their frictional potential energy under normal load is correlated to their metallicity; namely, the metallic TMD has a lower frictional potential energy. The underlying reason is that the metallicity or semiconductivity in TMD energy band structures results in different interlayer quasibonding (QB) interactions. For the metallic ${d}^{1} \mathrm{Nb}{\mathrm{S}}_{2}$ monolayer, there is a half-filled band; in a BL, the interlayer QB alters the half-filled band into two partial-filled bands that have different numbers of electrons, leading to a charge transfer between the two partial-filled bands. The charge transfer between bands effectively weakens the Pauli repulsion between the metallic TMD layers and ultimately leads to a significant decrease in the slope of the frictional potential energy with the increase of normal load. In contrast, for semiconducting ${d}^{2} \mathrm{Mo}{\mathrm{S}}_{2}$, there is no such charge-transfer effect to reduce the interlayer Pauli repulsion, and the slope of frictional potential energy with normal load is larger than the metallic TMDs. Our findings provide an approach for designing lower friction coefficients with metallic van der Waals layered materials.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-10-14
DOI
https://doi.org/10.1103/8j2t-5wbq
Primary Topic
Metal and Thin Film Mechanics
Type
article
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article

Effect of metallicity on interlayer frictional potential energy of transition metal dichalcogenides under normal load

Jiang-Long Wang, Ruining Wang, Peng-Lai Gong, Xingqiang Shi et al.
Physical review. B./Physical review. B
Metal and Thin Film Mechanics
article

Effect of metallicity on interlayer frictional potential energy of transition metal dichalcogenides under normal load

Jiang-Long Wang, Ruining Wang, Peng-Lai Gong, Xingqiang Shi, Chendong Jin, Xinyu Zhang, Xinyu Li, Yumeng Gao, Jia-Bin Liu
article en

Abstract

Van der Waals two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit great potential in solid tribology design. Understanding the mechanism at the electronic level is essential for the design of low-friction-coefficient 2D materials. Here, via a comparative study of metallic ${d}^{1}$ and semiconducting ${d}^{2}$ TMD bilayers (BLs), we find that their frictional potential energy under normal load is correlated to their metallicity; namely, the metallic TMD has a lower frictional potential energy. The underlying reason is that the metallicity or semiconductivity in TMD energy band structures results in different interlayer quasibonding (QB) interactions. For the metallic ${d}^{1} \mathrm{Nb}{\mathrm{S}}_{2}$ monolayer, there is a half-filled band; in a BL, the interlayer QB alters the half-filled band into two partial-filled bands that have different numbers of electrons, leading to a charge transfer between the two partial-filled bands. The charge transfer between bands effectively weakens the Pauli repulsion between the metallic TMD layers and ultimately leads to a significant decrease in the slope of the frictional potential energy with the increase of normal load. In contrast, for semiconducting ${d}^{2} \mathrm{Mo}{\mathrm{S}}_{2}$, there is no such charge-transfer effect to reduce the interlayer Pauli repulsion, and the slope of frictional potential energy with normal load is larger than the metallic TMDs. Our findings provide an approach for designing lower friction coefficients with metallic van der Waals layered materials.

Physical review. B./Physical review. BVol. 112(15)
Hebei University (CN)
Openalex Percentile: Top 67%
Metal and Thin Film Mechanics
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