Radiation‐Hardened Design of High‐Voltage Gate Drive Circuit in a 0.5‐μm SOI‐BCD Process

ABSTRACT High‐voltage gate drive circuits for orbital satellite applications must withstand space ionizing radiation. Currently, the radiation‐hardened high‐voltage driver circuits based on SOI‐BCD process MOS devices have achieved relatively good resistance to total ionizing dose (TID) effects, but their capability to withstand single‐event effects (SEEs) still requires further improvement. To take account of the TID effect and SEEs simultaneously, this study investigates radiation‐hardened high‐voltage gate drive circuits using SOI‐BCD MOS devices. First, a gate‐all‐around (GAA) structure is adopted for the MOS devices to enhance TID immunity. Furthermore, an SEE‐resistant gate drive scheme suitable for high‐voltage applications is proposed, incorporating single‐event transient (SET) filtering to significantly improve SEE tolerance. Experimental results indicate that the proposed circuit operates reliably under a TID level of 100 krad (Si), with minimal parameter deviations post‐irradiation, meeting design specifications. The circuit functionality remains stable at a linear energy transfer (LET) level of 75 MeV·cm 2 /mg. The proposed design achieves concurrent immunity to both TID and SEEs, demonstrating high potential for aerospace applications.