Two-Dimensional Covalent Organic Framework Films for High Dielectric Strength Electrically and Thermo-Mechanically Stable Low Permittivity Dielectrics

There is an urgent need to develop advanced dielectric materials with low permittivities (κ < 1.6) to address performance-limiting challenges for conventional and artificial intelligence (AI) microprocessors with miniaturized feature sizes, namely, delay in processing speeds, electronic crosstalk, high power consumption, and charge buildup. Known low-κ materials show poor dielectric strength and thermo-mechanical properties, rendering them unsuitable for next-generation electronic devices. Here, we demonstrate that the two-dimensional (2D) covalent organic frameworks (COF) films synthesized by the liquid-liquid interfacial reaction show very low permittivities (κ ≈ 1.17 at 100 kHz), ultrahigh dielectric strengths of ≈ 3908 MV/m at room temperature (≈2100 MV/m at 300 °C), low density of ≈1.1 g/cm<sup>3</sup>, and a high Young's modulus of ≈3.4 GPa. These properties are enabled by the highly crystalline and tightly packed nanoporous nanosheets of 2D COFs arranged in periodic structures in 2D COF films and surpass the requirements for next-generation electronic devices.

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Publication Details

Journal
ACS Nano
Published
2025-10-14
DOI
https://doi.org/10.1021/acsnano.5c11582
Citations
2
Primary Topic
Covalent Organic Framework Applications
Type
article
Field-Weighted Citation Impact
1.04
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article

Two-Dimensional Covalent Organic Framework Films for High Dielectric Strength Electrically and Thermo-Mechanically Stable Low Permittivity Dielectrics

Saurabh Kr Tiwary, Maninderjeet Singh, Francisco C. Robles Hernández, Devin L. Shaffer et al.
2 citations
ACS Nano
Covalent Organic Framework Applications
1.04
article

Two-Dimensional Covalent Organic Framework Films for High Dielectric Strength Electrically and Thermo-Mechanically Stable Low Permittivity Dielectrics

Saurabh Kr Tiwary, Maninderjeet Singh, Francisco C. Robles Hernández, Devin L. Shaffer, Alamgir Karim, R. Parthiban, Maria Camila Belduque Correa, Erin M. Schroeder
article en
2 citations

Abstract

There is an urgent need to develop advanced dielectric materials with low permittivities (κ < 1.6) to address performance-limiting challenges for conventional and artificial intelligence (AI) microprocessors with miniaturized feature sizes, namely, delay in processing speeds, electronic crosstalk, high power consumption, and charge buildup. Known low-κ materials show poor dielectric strength and thermo-mechanical properties, rendering them unsuitable for next-generation electronic devices. Here, we demonstrate that the two-dimensional (2D) covalent organic frameworks (COF) films synthesized by the liquid-liquid interfacial reaction show very low permittivities (κ ≈ 1.17 at 100 kHz), ultrahigh dielectric strengths of ≈ 3908 MV/m at room temperature (≈2100 MV/m at 300 °C), low density of ≈1.1 g/cm<sup>3</sup>, and a high Young's modulus of ≈3.4 GPa. These properties are enabled by the highly crystalline and tightly packed nanoporous nanosheets of 2D COFs arranged in periodic structures in 2D COF films and surpass the requirements for next-generation electronic devices.

ACS NanoVol. 19(42)
EA Technology (GB), University of Houston (US), Columbia University (US)
Openalex Percentile: Top 22%
Covalent Organic Framework Applications
1.04
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Two-Dimensional Covalent Organic Framework Films for High Dielectric Strength Electrically and Thermo-Mechanically Stable Low Permittivity Dielectrics — Saurabh Kr Tiwary, Maninderjeet Singh, et al. · ACS Nano (2025) | TGRS Research Map | TGRS