Ion beam technology: From defect engineering to atomic-level doping

Authors

Xiangheng Xiao
Shengjun Yuan (ORCID: https://orcid.org/0000-0001-6208-1502)
Jinlong Gong (ORCID: https://orcid.org/0000-0001-7263-318X)
Zhi Gang Cheng (ORCID: https://orcid.org/0000-0002-9449-6734)
Wenqing Li (ORCID: https://orcid.org/0000-0001-5431-2120)

Publication Details

Journal: Zhongguo kexue. Wulixue Lixue Tianwenxue
Published: 2025-10-14
DOI: https://doi.org/10.1360/sspma-2025-0336
Primary Topic: Integrated Circuits and Semiconductor Failure Analysis
Type: article
Field-Weighted Citation Impact: 0.00

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article

Ion beam technology: From defect engineering to atomic-level doping

Xiangheng Xiao, Shengjun Yuan, Jinlong Gong, Zhi Gang Cheng et al.

Oct 14, 2025

Zhongguo kexue. Wulixue Lixue Tianwenxue

Integrated Circuits and Semiconductor Failure Analysis

article

Ion beam technology: From defect engineering to atomic-level doping

Xiangheng Xiao, Shengjun Yuan, Jinlong Gong, Zhi Gang Cheng, Wenqing Li

October 14, 2025article en

Abstract

No abstract available for this paper.

Zhongguo kexue. Wulixue Lixue TianwenxueVol. 56(2)

Openalex Percentile: Top 71%

Integrated Circuits and Semiconductor Failure Analysis

DOI Open Access PDF OpenAlex

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Ion beam technology: From defect engineering to atomic-level doping — Xiangheng Xiao, Shengjun Yuan, et al. · Zhongguo kexue. Wulixue Lixue Tianwenxue (2025) | TGRS Research Map | TGRS