Experimental Analysis and Computational Modeling of Residual Stress in β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown on Si by RF Magnetron Sputtering
Gallium oxide is becoming increasingly attractive as a next-generation material for semiconductor applications, prompting the need for efficient and economical techniques for thin-film fabrication, especially on non-native substrates. In this work, β-Ga2O3 films with a thickness of 0.25 µm were grown on a silicon substrate via radio-frequency magnetron sputtering. Raman spectroscopy and X-ray diffraction analysis confirmed the good crystalline quality of the synthesized β-Ga2O3 films. The mechanical stresses in the β-Ga2O3/Si heterostructure were measured using X-ray diffraction. A comparative analysis with simulated data obtained via finite element modeling demonstrated good correlation between experiment and theory.
Authors
- Robert P. Johnson (ORCID: https://orcid.org/0000-0002-8046-2138)
- R.A. Redko (ORCID: https://orcid.org/0000-0001-9036-5852)
- В. В. Кідалов (ORCID: https://orcid.org/0000-0002-5128-1880)
- Dominik Duleba (ORCID: https://orcid.org/0000-0002-0618-2162)
- O. O. Sushko
- А. С. Ревенко (ORCID: https://orcid.org/0009-0009-4147-1179)
- М. М. Коптєв (ORCID: https://orcid.org/0009-0004-8956-4802)
- O. Gudymenko (ORCID: https://orcid.org/0000-0002-5866-8084)
- M. P. Derhachov (ORCID: https://orcid.org/0000-0002-8627-6678)
- Marc Aßmann (ORCID: https://orcid.org/0000-0003-4953-1286)
Institutions
- University College Dublin (IE)
- TU Dortmund University (DE)
- V.E. Lashkaryov Institute of Semiconductor Physics (UA)
- Oles Honchar Dnipro National University (UA)
Publication Details
- Journal
- Acta Physica Polonica A
- Published
- 2025-10-13
- DOI
- https://doi.org/10.12693/aphyspola.148.158
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science Foundation Ireland
- Deutsche Forschungsgemeinschaft