Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory

The random thermal switching of domain walls (DWs) in perpendicularly magnetized anisotropy nanowires (PMA) poses a significant challenge for the reliability of spintronic storage devices. In this work, we study the thermal nucleation and dynamics of DWs in PMA nanowires using micromagnetic simulations. The focus is on the effect of device temperature, with attention to uniaxial anisotropy energy (<i>K_u</i>), saturation magnetization (<i>M_s</i>), and nanowire geometry. The results show that larger <i>K_u</i> or <i>M_s</i> reduces DW thermal switching, thereby enhancing DW thermal stability and increasing the DW nucleation temperature (<i>T_n</i>). A wider or thicker nanowire also lowers the probability of thermally induced DW creation, further improving stability. In addition, DW velocity rises with temperature, showing a thermally assisted motion. These results provide useful guidance for designing PMA-based memory devices with improved resistance to thermal fluctuations.