Fundamental Structure and Key Performance Applications of Nanoelectronics Device GAAFET

With the development of integrated circuit technology to 3 nm and below advanced nodes, traditional transistors are difficult to meet the requirements of high performance and low power consumption due to the short channel effect and insufficient electrostatic control ability. The gate-all-around field-effect transistor (GAAFET) has emerged as the core candidate of next-generation nanoelectronics devices under its unique structure. However, its complex structure brings many research problems, such as the traditional physical model is difficult to accurately describe the electrical characteristics, and the efficiency of parameter extraction is low. As semiconductor technology continues to move towards more advanced nodes, GAAFET is expected to become the core support to break through the limits of Moore's Law. In the future, we can focus on complex application scenarios, further strengthen the research on the performance stability and reliability of GAAFET, overcome the problems of precise control of multi-layer stack thermal coupling and noise suppression at different frequencies, and accelerate its industrialization from laboratory theoretical exploration. At the same time, we will actively expand the integration path with emerging technologies such as quantum computing assistant circuits and brain-like chips, tap more potential application scenarios such as ultra-low power Internet of Things devices and high-performance edge computation chips, help 5G/6G communications, artificial intelligence, and other frontier industries achieve leapfrog development, and open up a new technology track and growth space for the semiconductor industry.