Enhancing WPE for AlGaN-based DUV LEDs using a hybrid heterostructure and recessed electrodes design
One of the key factors limiting the wall-plug efficiency (WPE) of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is the high voltage drop over the n-contact on the Al-rich n-AlGaN. Here, we have proposed a hybrid scheme of n-AlGaN heterostructure and recessed cathodes to optimize the n-contact. The designed LED with n-Al<sub>0.70</sub>Ga<sub>0.30</sub>N insertion layer to construct a hetero-structure and proper-depth recess n-electrodes exhibits twice the current density and 38.7% WPE improvement related to the conventional LED. Numerical calculations reveal that the hybrid n-contact structure can enhance electron injection efficiency and radiative recombination efficiency by modulating electron transport processes. This study offers a feasible strategy for AlGaN-based DUV LEDs to reduce electrical turn-on voltage and improve optical efficiency.
Authors
- Dabing Li (ORCID: https://orcid.org/0000-0001-5353-1460)
- Kexi Liu (ORCID: https://orcid.org/0000-0002-9289-2071)
- Yu Chen (ORCID: https://orcid.org/0000-0002-3014-9012)
- Xianjun Wang (ORCID: https://orcid.org/0000-0001-6545-5469)
- Xiaojuan Sun (ORCID: https://orcid.org/0000-0001-6836-3893)
- Yang Chen (ORCID: https://orcid.org/0000-0002-1001-062X)
- Yuping Jia (ORCID: https://orcid.org/0000-0001-7731-0574)
- Mingrui Liu (ORCID: https://orcid.org/0000-0001-7275-4790)
- Ke Jiang (ORCID: https://orcid.org/0000-0002-8372-1473)
- Bingxiang Wang
- Shunpeng Lv
- Shanli Zhang
Institutions
- Chinese Academy of Sciences (CN)
- Peng Cheng Laboratory (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-10-13
- DOI
- https://doi.org/10.1364/ol.576757
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00