Design of the Inner-Matched Power Amplifier in C-Band for Next-Generation Communication

This article introduces a design approach for a highly reliable $\mathbf{C}$-band internal-matched power amplifier based on GaN HEMT. Utilizing the 9.6 mm GaN HEMT independently developed by Nanjing Electronic Device Institute on the $0.35 \mu \mathrm{~m}$ process platform as the foundation, and employing the techniques of power divider and multi-cell synthesis, the L-C matching network is designed to achieve impedance matching. This highpower GaN internal-matched power amplifier has achieved an output power greater than 80 W, power-added efficiency greater than $55.5 \%$ under continuous-wave test conditions within the 6.9 GHz to 7.2 GHz frequency band, presenting broad prospects for engineering applications.