L-band High Performance Power Amplifier for Communication Application

In this paper, a L-band GaAs broadband high-performance power amplifier is developed, which has the characteristics of high integration, compact and high efficiency. The active components in the amplifier adopt $0.5 \mu \mathrm{~m}$ gate length GaAs FET, and the circuit adopts two-stage amplification mode. The driving, inter-stage and output matching circuits are designed with ceramic matching circuits. The developed amplifier works at the gate voltage of -0.8V, drain voltage of 10V, and $1.2-1.4 \mathrm{GHz}$ frequency at c.w. condition. The output power is greater than 31dBm, the power additional efficiency is greater than $35 \%$, the power gain is greater than 26dB, and the junction temperature is less than $100{ }^{\circ} \mathrm{C}$. The package size is $17.4 \mathrm{mm} \times 24 \mathrm{~mm}$. It realizes the perfect combination of high-performance output and miniaturization integration.