Continuous GaN Broadband Power Amplifiers for Civilian Communications

In this paper, through the Load-Pull test on the equivalent model, the relative position of the second harmonic in the Smith chart is determined. A $\lambda / 8$ open circuit microstrip line is adopted to control the second harmonic, and a $2-4 \mathrm{GHz}$ broadband power amplifier is designed. Optimal second harmonic impedance matching is achieved in a wide frequency band, which realizes the bandwidth expansion and efficiency improvement of the power amplifier. Within the band, an output power of $44.8-46.6 \mathrm{dBm}$, a drain efficiency of $\mathbf{6 8. 1 \% - 6 9. 8 \%}$, and a gain of 13.8-14.4 dB can be achieved.

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Publication Details

Published
2025-05-23
DOI
https://doi.org/10.1109/ccai65422.2025.11189489
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Continuous GaN Broadband Power Amplifiers for Civilian Communications

Shichang Zhong, Yu Huang
GaN-based semiconductor devices and materials
article

Continuous GaN Broadband Power Amplifiers for Civilian Communications

Shichang Zhong, Yu Huang
article en

Abstract

In this paper, through the Load-Pull test on the equivalent model, the relative position of the second harmonic in the Smith chart is determined. A $\lambda / 8$ open circuit microstrip line is adopted to control the second harmonic, and a $2-4 \mathrm{GHz}$ broadband power amplifier is designed. Optimal second harmonic impedance matching is achieved in a wide frequency band, which realizes the bandwidth expansion and efficiency improvement of the power amplifier. Within the band, an output power of $44.8-46.6 \mathrm{dBm}$, a drain efficiency of $\mathbf{6 8. 1 \% - 6 9. 8 \%}$, and a gain of 13.8-14.4 dB can be achieved.

Openalex Percentile: Top 82%
GaN-based semiconductor devices and materials
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Continuous GaN Broadband Power Amplifiers for Civilian Communications — Shichang Zhong, Yu Huang · (2025) | TGRS Research Map | TGRS