A 650 nA Quiescent Current, 0.35 V/2 V, All-MOS Subthreshold Voltage Reference Without Amplifiers
This study proposes a 650 nA quiescent current and all-MOS transistors voltage reference without using amplifiers. To reduce quiescent current, all transistors working in the subthreshold region is implemented with a standard 180 nm CMOS process. A MOS subdivision circuit without using amplifiers and consuming quite low power is proposed to shift the reference voltage <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>REF</i>1</sub> of 0.35 V to a higher voltage level <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>REF</sub></i> around 2 V; meanwhile a high-order temperature compensation paths are also proposed to obtain a lower temperature coefficient (TC) for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>REF</sub></i> . Measurement results showed that a total current as low as 650 nA and reference voltages around 0.35 V and 2.0 V are obtained. Without external trimming circuit <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><i>REF</i>1</sub> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>REF</sub></i> achieve a mean TC (temperature coefficient) of 573.9 ppm/°C and 435.3 ppm/°C respectively, where the temperature ranged from -40 to 85 °C.
Authors
- Zhen Meng (ORCID: https://orcid.org/0000-0001-5756-9159)
- Xiaolu Lucia Li (ORCID: https://orcid.org/0000-0003-1786-5353)
- Quanzhen Duan (ORCID: https://orcid.org/0000-0003-0236-3019)
- Yuemin Ding (ORCID: https://orcid.org/0000-0001-7697-2197)
- Roc Berenguer (ORCID: https://orcid.org/0000-0003-0313-7152)
- Gang Yu (ORCID: https://orcid.org/0000-0003-1651-6143)
- Wuxiong Weng
Institutions
- Sun Yat-sen University (CN)
- Shenzhen University (CN)
- Chinese Academy of Sciences (CN)
- China Association for Science and Technology (CN)
- Beijing Founder Electronics (China) (CN)
- Institute of Microelectronics (CN)
- Universidad de Navarra (ES)
Publication Details
- Journal
- IEEE Transactions on Consumer Electronics
- Published
- 2025-10-13
- DOI
- https://doi.org/10.1109/tce.2025.3620800
- Primary Topic
- Analog and Mixed-Signal Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00