Breaking the Dose Barrier in PMMA: Metal Oxide–Induced Hybrid Strategy for Negative-Tone Lithography

As continued device scaling demands thinner photoresists with enhanced sensitivity and etch resistance, organic-inorganic hybrid resists have emerged as promising candidates by combining the processability of polymers with the mechanical robustness of

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Publication Details

Published
2025-10-13
DOI
https://doi.org/10.22541/au.176038042.23290895/v1
Primary Topic
Semiconductor materials and devices
Type
article
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article

Breaking the Dose Barrier in PMMA: Metal Oxide–Induced Hybrid Strategy for Negative-Tone Lithography

Jiwoong Ham, Nari Jeon, Minkyung Ko, Young Heon Kim
Semiconductor materials and devices
article

Breaking the Dose Barrier in PMMA: Metal Oxide–Induced Hybrid Strategy for Negative-Tone Lithography

Jiwoong Ham, Nari Jeon, Minkyung Ko, Young Heon Kim
article en

Abstract

As continued device scaling demands thinner photoresists with enhanced sensitivity and etch resistance, organic-inorganic hybrid resists have emerged as promising candidates by combining the processability of polymers with the mechanical robustness of

Chungnam National University (KR)
Openalex Percentile: Top 72%
Semiconductor materials and devices
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Breaking the Dose Barrier in PMMA: Metal Oxide–Induced Hybrid Strategy for Negative-Tone Lithography — Jiwoong Ham, Nari Jeon, et al. · (2025) | TGRS Research Map | TGRS