Reducing Non-Radiative Recombination Through Interfacial N-Bromosuccinimide Engineering for Multi-Cation Perovskite Solar Cells

Minimizing surface defects in perovskite films is crucial for suppressing non-radiative recombination and enhancing device performance. Herein, we propose the use of N-bromosuccinimide (NBS), a small molecule containing Lewis base carbonyl groups (C=O), to improve the quality of RbCsMAFA mixed-cation perovskite films. This surface treatment effectively reduces non-radiative charge-carrier recombination, in particular through the passivation of surface defects related to undercoordinated Pb2+ ions and halide vacancies, and significantly accelerates charge extraction from the perovskite into the Spiro-OMeTAD hole transporter. Consequently, NBS-treated PerSCs achieve a power conversion efficiency (PCE) of 18.24%, representing an 11% relative increase over the control device (16.48%). This enhancement is mainly attributed to a Voc gain of up to 40 mV and modifications in the recombination dynamics. Supporting evidence from impedance spectroscopic analyses further confirms enhanced energy-level alignment and reduced interfacial losses, improved charge transport as well as prolonged charge lifetimes within the devices. This work provides a simple yet effective approach to reduce the non-radiative recombination losses towards more efficient and stable PerSCs.