Temperature-dependent analysis of SiC SJ-TG-IGBT with split collector for reduced losses and high breakdown voltage

This paper presents an improved Silicon Carbide (SiC) Superjunction Trench Gate type Insulated Gate Bipolar Transistor (SJ-TG-IGBT) featuring a split collector region to reduce turn-off losses, and providing relatively high breakdown voltage. The high breakdown voltage is achieved by designing a modified collector structure to optimize the electric field distribution. The trench gate architecture and superjunction concept further minimizes the on-state and transient losses, particularly during turn-off condition, which is a critical challenge for high-power devices. Compared with conventional SiC IGBT, the improved SiC device design achieves higher breakdown voltages while reducing turn-off energy losses significantly, making it highly suitable for power electronics applications requiring high efficiency and reliability. The proposed SiC device performance under various ambient temperatures is also thoroughly investigated, demonstrating improved devices performance parameters, thus making it the most suitable choice for applications requiring high thermal efficiency.