Impact of Antisolvent and Gas Quenching on Wrinkling in Cs <sub>0.15</sub> FA <sub>0.85</sub> Pb(I <sub>0.6</sub> Br <sub>0.4</sub> ) <sub>3</sub> Perovskite Films

The surface topography of the lead halide perovskite layer is a crucial aspect that influences the performance of perovskite solar cells (PSCs). In this work, two different quenching approaches for the crystallization of Cs<sub>0.15</sub>FA<sub>0.85</sub>Pb(I<sub>0.6</sub>Br<sub>0.4</sub>)<sub>3</sub> perovskite films are investigated: antisolvent quenching and gas quenching. Both methods, aimed at removing the solvent of the precursor solution and initiating the perovskite nucleation, differ mechanistically and result in different rates of crystallization, which cause surface topographical irregularities, in the form of elongated and elevated structures on the films, termed "wrinkles". This study shows that antisolvent-quenched perovskite films exhibit a higher density of wrinkles than the gas-quenched counterparts. Pinholes were found along the wrinkles; thus, a higher density of wrinkles leads to more pinholes and to more defective surface topography. The wrinkles also make the surface rougher, hindering homogeneous contact with the adjacent passivation layer and reducing the overall performance of the solar cells. By comparing the two different quenching methods, we obtained insight into the formation of the wrinkles and their effects on the optoelectronic properties of the perovskite films. We identify the gas quenching method as a way to reduce the wrinkle density to achieve better photovoltaic performance in comparison with the antisolvent method.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-10-12
DOI
https://doi.org/10.1021/acsami.5c07659
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.73
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article

Impact of Antisolvent and Gas Quenching on Wrinkling in Cs 0.15 FA 0.85 Pb(I 0.6 Br 0.4 ) 3 Perovskite Films

Erkan Aydın, Rik Hooijer, Lukas Schmidt‐Mende, Emilia R. Schütz et al.
1 citations
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
0.73
article

Impact of Antisolvent and Gas Quenching on Wrinkling in Cs 0.15 FA 0.85 Pb(I 0.6 Br 0.4 ) 3 Perovskite Films

Erkan Aydın, Rik Hooijer, Lukas Schmidt‐Mende, Emilia R. Schütz, Yenal Yalçinkaya, Daniele T. Cuzzupè, Stefan M. Schupp, Muhammad Irfan Haider, Yekitwork Abebe Temitmie, Maria Azhar
article en
1 citations

Abstract

The surface topography of the lead halide perovskite layer is a crucial aspect that influences the performance of perovskite solar cells (PSCs). In this work, two different quenching approaches for the crystallization of Cs<sub>0.15</sub>FA<sub>0.85</sub>Pb(I<sub>0.6</sub>Br<sub>0.4</sub>)<sub>3</sub> perovskite films are investigated: antisolvent quenching and gas quenching. Both methods, aimed at removing the solvent of the precursor solution and initiating the perovskite nucleation, differ mechanistically and result in different rates of crystallization, which cause surface topographical irregularities, in the form of elongated and elevated structures on the films, termed "wrinkles". This study shows that antisolvent-quenched perovskite films exhibit a higher density of wrinkles than the gas-quenched counterparts. Pinholes were found along the wrinkles; thus, a higher density of wrinkles leads to more pinholes and to more defective surface topography. The wrinkles also make the surface rougher, hindering homogeneous contact with the adjacent passivation layer and reducing the overall performance of the solar cells. By comparing the two different quenching methods, we obtained insight into the formation of the wrinkles and their effects on the optoelectronic properties of the perovskite films. We identify the gas quenching method as a way to reduce the wrinkle density to achieve better photovoltaic performance in comparison with the antisolvent method.

ACS Applied Materials & InterfacesVol. 17(42)
University of Konstanz (DE), Bahir Dar University (ET), Ludwig-Maximilians-Universität München (DE)
Openalex Percentile: Top 22%
Perovskite Materials and Applications
0.73
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