Direct imaging elucidates ionic memory in two-dimensional nanochannels

Nanofluidic memristors promise brain-inspired information processing with ions, yet their microscopic origin remains debated. So far, ionic memory has been attributed to ion-specific interactions, dynamic wetting, chemical reactions or mechanical deformations, yet typically without direct experimental evidence. Here, by combining operando interferometric imaging with electrokinetic measurements, we directly visualize voltage-induced blistering of the confining walls of two-dimensional (2D) nanochannels as the key origin of memristive hysteresis. We identify two distinct classes of blisters: unidirectional, driven by electrostatic forces on surface charges, and bidirectional, arising from osmotic pressure due to concentration polarization. This mechanistic framework explains device evolution and device-to-device variability, and reframes stochastic blistering as a functional design element. Our results constitute a direct proof of electromechanical coupling as a robust pathway to ionic memory in 2D nanochannels and open routes towards high-performance ionic memristors and electrically actuated nanofluidic valves.

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Publication Details

Journal
Nature Materials
Published
2026-10-27
DOI
https://doi.org/10.1038/s41563-026-02775-4
Citations
1
Primary Topic
Nanopore and Nanochannel Transport Studies
Type
article
Field-Weighted Citation Impact
1.72

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Direct imaging elucidates ionic memory in two-dimensional nanochannels

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Nanopore and Nanochannel Transport Studies
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Direct imaging elucidates ionic memory in two-dimensional nanochannels

Baptiste Coquinot, Boya Radha, Ashok Keerthi, Theo Emmerich, Aleksandra Rađenović, Agustin D. Pizarro, Nathan Ronceray, Kalluvadi Veetil Saurav
article en
1 citations

Abstract

Nanofluidic memristors promise brain-inspired information processing with ions, yet their microscopic origin remains debated. So far, ionic memory has been attributed to ion-specific interactions, dynamic wetting, chemical reactions or mechanical deformations, yet typically without direct experimental evidence. Here, by combining operando interferometric imaging with electrokinetic measurements, we directly visualize voltage-induced blistering of the confining walls of two-dimensional (2D) nanochannels as the key origin of memristive hysteresis. We identify two distinct classes of blisters: unidirectional, driven by electrostatic forces on surface charges, and bidirectional, arising from osmotic pressure due to concentration polarization. This mechanistic framework explains device evolution and device-to-device variability, and reframes stochastic blistering as a functional design element. Our results constitute a direct proof of electromechanical coupling as a robust pathway to ionic memory in 2D nanochannels and open routes towards high-performance ionic memristors and electrically actuated nanofluidic valves.

Nature Materials
École Normale Supérieure de Lyon (FR), Centre National de la Recherche Scientifique (FR), Université de Bordeaux (FR), Institute of Science and Technology Austria (AT), Université de Lyon (FR), University of Manchester (GB), Laboratoire de Physique de l'ENS de Lyon (FR), Laboratoire Photonique, Numérique et Nanosciences (FR), École Polytechnique Fédérale de Lausanne (CH)
Leverhulme Trust, European Commission, École Polytechnique Fédérale de Lausanne, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, NOMIS Stiftung, Horizon 2020 Framework Programme, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 24%
Nanopore and Nanochannel Transport Studies
1.72
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