High Performance RSP-14TSRAM Cell Design Using 65nm CMOS Technology for Low Power Aerial Applications

Transistor size decreases with technological advances and increases speed. This reduction leads to SRAM cells used for air and space applications. it is vulnerable to radiation. triggering multi-node agitation as well. There are energy- efficient dual node upsets in this article. For low- performance air and space applications, recoverable 14T- SRAM cells were used. In this extend, the modern RSP-14T- SRAM-Bitzelle (radiation remedy in speed and execution) points to make strides speed, execution productivity and unwavering quality in radiation-prone situations. The proposed RSP-14T 8-bit SRAM cell plan by optimizing at the format level of 65 nm-CMOS innovation. By stacking the cooperation impact into the off-state transistor, this plan makes strides flexibility against single occasion disarray and occasions for a few grades of disarray. In high-rating situations, overwhelming particle strikes can ionize semiconductor materials and make intemperate loads that can be recorded at delicate circuit hubs. This makes the placement ideal for radiation curing capabilities.

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Publication Details

Published
2025-10-11
DOI
https://doi.org/10.38124/ijisrt/25oct315
Primary Topic
Radiation Effects in Electronics
Type
article
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article

High Performance RSP-14TSRAM Cell Design Using 65nm CMOS Technology for Low Power Aerial Applications

CH. Pallavi, Vempuluru Kusuma
Radiation Effects in Electronics
article

High Performance RSP-14TSRAM Cell Design Using 65nm CMOS Technology for Low Power Aerial Applications

CH. Pallavi, Vempuluru Kusuma
article en

Abstract

Transistor size decreases with technological advances and increases speed. This reduction leads to SRAM cells used for air and space applications. it is vulnerable to radiation. triggering multi-node agitation as well. There are energy- efficient dual node upsets in this article. For low- performance air and space applications, recoverable 14T- SRAM cells were used. In this extend, the modern RSP-14T- SRAM-Bitzelle (radiation remedy in speed and execution) points to make strides speed, execution productivity and unwavering quality in radiation-prone situations. The proposed RSP-14T 8-bit SRAM cell plan by optimizing at the format level of 65 nm-CMOS innovation. By stacking the cooperation impact into the off-state transistor, this plan makes strides flexibility against single occasion disarray and occasions for a few grades of disarray. In high-rating situations, overwhelming particle strikes can ionize semiconductor materials and make intemperate loads that can be recorded at delicate circuit hubs. This makes the placement ideal for radiation curing capabilities.

Openalex Percentile: Top 72%
Radiation Effects in Electronics
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High Performance RSP-14TSRAM Cell Design Using 65nm CMOS Technology for Low Power Aerial Applications — CH. Pallavi, Vempuluru Kusuma · (2025) | TGRS Research Map | TGRS