Effect of he+ ion irradiation on interface width in thin-film co/pt terahertz spintronic sources

In this work, we experimentally studied the structural modification of the interfaces in bilayer Co/Pt spintronic terahertz emitters under irradiation with He+ ions with a fluence of up to 1016 cm-2. Using the non-destructive method of small-angle X-ray reflectometry, an increase in the Co/Pt interface width from 1.2 nm (initial sample) to 1.9 nm under irradiation with He+ with a fluence of 1016 cm-2 was detected. The experimental data are in good agreement with the results of modeling using SRIM. The magneto-optical measurements showed that the samples retain their magnetic properties at all fluences. The results can be used to increase the efficiency of terahertz generation in such structures.

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Publication Details

Journal
Физика металлов и металловедение / Physics of Metals and Metallography
Published
2025-01-01
DOI
https://doi.org/10.7868/s3034621525020072
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article

Effect of he+ ion irradiation on interface width in thin-film co/pt terahertz spintronic sources

Ilya Antonov
Физика металлов и металловедение / Physics of Metals and Metallography
Semiconductor Quantum Structures and Devices
article

Effect of he+ ion irradiation on interface width in thin-film co/pt terahertz spintronic sources

Ilya Antonov
article en

Abstract

In this work, we experimentally studied the structural modification of the interfaces in bilayer Co/Pt spintronic terahertz emitters under irradiation with He+ ions with a fluence of up to 1016 cm-2. Using the non-destructive method of small-angle X-ray reflectometry, an increase in the Co/Pt interface width from 1.2 nm (initial sample) to 1.9 nm under irradiation with He+ with a fluence of 1016 cm-2 was detected. The experimental data are in good agreement with the results of modeling using SRIM. The magneto-optical measurements showed that the samples retain their magnetic properties at all fluences. The results can be used to increase the efficiency of terahertz generation in such structures.

Физика металлов и металловедение / Physics of Metals and MetallographyVol. 126(2)
Openalex Percentile: Top 77%
Semiconductor Quantum Structures and Devices
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