Performance of 1.2 kV Field Stop Trench Clustered IGBTs in a Hybrid Power Switch Configuration

Cost effective approaches to achieve high efficiencies over wide load conditions is a key requirement in power electronic applications. To address this. Hybrid Power Switches (HPS) combining unipolar and MOS-bipolar technologies are emerging. In this paper, HPS configurations utilizing the latest Si Clustered IGBT (CIGBT) and SiC MOSFET technologies are demonstrated through measurements of characteristics and in-depth analyses. The results are compared with HPS employing the latest IGBT7 technology. The proposed solution using CIGBT demonstrates a noticeable reduction in on-state losses compared to equivalent HPS utilizing IGBT counterparts thanks to the controlled thyristor performance of the CIGBT. Due to the internal physics of the TCIGBT, the measured switching losses of the HPS are also comparable to that of its constituent SiC MOSFET while the device is capable of carrying at least twice the current.