Compact Models as Key Enablers for Converter Simulation in Time Domain

Companies have been using compact models for power devices over the past decades to evaluate their designs in circuit simulation. These simulations are performed for large time scales including a high number of switching events. Therefore, the compact models should be fast, but also accurate and stable with regard to convergence. This keynote paper provides an overview of the different modeling techniques, like behavioral and physics-based ones, that aim to fulfill customer requirements. The pros and cons of these techniques in terms of the most important evaluation criteria are discussed. The paper also offers Infineon’s perspective into the challenges faced in compact modeling of bipolar power devices, such as the PIN diode and the IGBT, and in the recent models of unipolar devices, such as the SiC MOSFET. An important part of generating models is their parameterization to obtain the best fit to available reference data of specific devices. The application of AI in the development of new calibration methods for compact models is also examined. Finally, an outlook on the future of compact modeling for power semiconductors is shared.